DocumentCode
2824623
Title
A practical simulation based study on MIM-capacitors processed in MOS technologies
Author
Tatinian, William ; Pannier, Philippe ; Gillon, Renaud
Author_Institution
L2MP, Technopole de Chateau Gombert, Marseille, France
Volume
3
fYear
2003
fDate
27-30 Dec. 2003
Firstpage
1327
Abstract
This paper provides a set of comparisons of simulated capacitance values with process and geometry variations. Most particularly, the difference between a capacitance measured on a test structure and the actual value is shown. Based on the observations, a scaleable broadband model accounting for the main effects is proposed.
Keywords
MIM devices; capacitance; capacitors; integrated circuit modelling; MIM-capacitors; MOS; capacitance; Ambient intelligence; Bridge circuits; Capacitance; Capacitors; Circuit simulation; Circuit testing; Conductivity; Dielectric losses; Dielectric substrates; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562540
Filename
1562540
Link To Document