A simple model for single-electron transistors

The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under laboratory investigations in the fields of fabrication and applications in LSI. Simulation of SET consumes a great deal of computer time, which raises a need to renovate fast and accurate simulation algorithms. This paper presents a simple model for SETs, based on the orthodox theory, which calculates carrier transfer rates from source to drain of the transistor by utilizing statistical mechanics. The presented model simplifies the simulation algorithm used by online calculator model, which is also based on the orthodox theory. The proposed model proved to be accurate and can be easily incorporated in the simulation of large-scale integrated circuits.