DocumentCode
282479
Title
Source inductance effects on high speed switching of power MOSFETs
Author
Hinchliffe, S.
Author_Institution
Stanelco Products Ltd., Chandlers Ford
fYear
1989
fDate
32861
Firstpage
42430
Lastpage
42436
Abstract
In this paper, investigations into the effect of source inductance on the switching speed of the TO3 packaged 500 V, 12 A power MOSFET are reported. The use of the kelvin contact to increase switching speed of TO220 packaged, current sensing MOSFETs is analysed and the failure mode of such devices, when used in a high frequency inverter, investigated. Finally, the results of high speed switching tests performed on an RF packaged power MOSFET are detailed
Keywords
insulated gate field effect transistors; invertors; power transistors; 12 A; 500 V; RF packaged; current sensing; failure mode; high frequency inverter; kelvin contact; power MOSFET; source inductance; switching speed; switching tests;
fLanguage
English
Publisher
iet
Conference_Titel
Application of Hybrid Power Circuits and Packages, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
199217
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