Title :
Resistive power in CMOS circuits
Author :
El-Moursy, Magdy A. ; Friedman, Eby G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rochester Univ., NY, USA
Abstract :
Interconnect resistance dissipates a portion of the total transient power in CMOS circuits. Conduction losses increase with larger interconnect resistance. It is shown in this paper that these losses do not add to the total power dissipation of a CMOS circuit through I2R losses. Interconnect resistance can, however, increase the short-circuit power of both the driver and load gates.
Keywords :
CMOS integrated circuits; electric resistance; integrated circuit interconnections; short-circuit currents; CMOS circuits; conduction losses; driver; interconnect resistance; load gates; resistive power; short-circuit power; total power dissipation; total transient power; Capacitors; Driver circuits; Electric resistance; Inductance; Integrated circuit interconnections; Inverters; Power dissipation; Power system transients; RLC circuits; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Print_ISBN :
0-7803-8294-3
DOI :
10.1109/MWSCAS.2003.1562570
