Properties of II-VI Semiconductor Thin Films Prepared by Vacuum Evaporation for Photovoltaic Application

Author

Mohamed, Rania M. ; AbdelRassoul, Roshdy A. ; Rassoul, ElSayed M A

Author_Institution

Mansoura Univ., Mansoura

fYear

2007

fDate

13-15 March 2007

Firstpage

1

Lastpage

8

Abstract

Vacuum evaporation was used to deposit amorphous thin films of ll-VI Semiconductors. The material deposited included CdTe, Zither and ZnSe. Different deposition conditions were used. The deposited films were evaluated. Electrical and optical characterization of the films was performed, Measurements of the transmittance spectra of the deposited films were used to determine the electronic band gap energy, the refractive index, the dielectric constant, and the film thickness.

Keywords

III-V semiconductors; energy gap; permittivity; refractive index; semiconductor thin films; solar control films; solar power; vacuum deposited coatings; CdTe - Binary; ZnSe - Binary; ZnTe - Binary; amorphous thin films; dielectric constant; electrical optical characterization; electronic band gap energy; ll-VI semiconductor thin films; photovoltaic application; refractive index; transmittance spectra; vacuum evaporation; Amorphous materials; Dielectric materials; II-VI semiconductor materials; Optical films; Optical materials; Photovoltaic systems; Semiconductor films; Semiconductor thin films; Solar power generation; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2007. NRSC 2007. National

Conference_Location

Cairo

Print_ISBN

977-5031-86-9

Type

conf

DOI

10.1109/NRSC.2007.371408

Filename

4234155