Dielectric response of CaCu3Ti4O12 materials

Author

Pengfei, Cheng ; Hanchen, Liu ; Lixun, Song ; Caijuan, Xia

Author_Institution

Sch. of Sci., Xi´´an Polytech. Univ., Xi´´an, China

fYear

2011

fDate

15-17 July 2011

Firstpage

7303

Lastpage

7306

Abstract

The dielectric properties and its variation of CaCu₃Ti₄O₁₂ (CCTO) materials induced by the process conditions are reviewed in this paper. On the basis of heterogeneous microstructure in ceramics and single crystal, the extrinsic Maxwell-Wagner polarization mechanism of internal barrier layer capacitance (IBLC) model is discussed adequately. According to the especial crystal structure and atomic structure, possible grain semiconducting mechanism is proposed. At the end of the paper, theoretical problems in CCTO material, Maxwell-Wagner polarization and dielectric spectroscopy analysis are analyzed.

Keywords

calcium compounds; ceramics; copper compounds; crystal structure; permittivity; CaCu₃Ti₄O₁₂; Maxwell-Wagner polarization; atomic structure; ceramics; crystal structure; dielectric constant; dielectric properties; dielectric spectroscopy analysis; grain semiconducting mechanism; heterogeneous microstructure; internal barrier layer capacitance model; single crystal; Copper; Crystals; Dielectric constant; Microstructure; Spectroscopy; CaCu3Ti4O12; colossal dielectric constant; defect structure; dielectric spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on

Conference_Location

Hohhot

Print_ISBN

978-1-4244-9436-1

Type

conf

DOI

10.1109/MACE.2011.5988735

Filename

5988735