DocumentCode :
2825323
Title :
Power design challenges in deep-submicron technology
Author :
Anis, Mohab ; Massoud, Yehia
Author_Institution :
ECE Dept., Waterloo Univ., Ont., Canada
Volume :
3
fYear :
2003
fDate :
27-30 Dec. 2003
Firstpage :
1510
Abstract :
Power-efficient designs are becoming of increasing importance in the deep-submicron regime. Over the past decade, the reduction of dynamic power was the main focus in the design of power-efficient integrated circuits. However, as technology scales down, subthreshold and gate oxide leakage currents can no longer be neglected, arid must be taken into account in any design. Furthermore, the delivery of power to CMOS integrated circuits is facing increasing challenges in the deep-submicron regime. This paper investigates the challenges associated with designing power-efficient circuits as well as the delivery of power.
Keywords :
CMOS integrated circuits; integrated circuit design; leakage currents; CMOS integrated circuits; deep submicron technology; dynamic power reduction; integrated circuit design; power design challenges; CMOS integrated circuits; CMOS technology; Current density; Dynamic voltage scaling; Integrated circuit technology; Leakage current; Power dissipation; Power systems; Subthreshold current; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN :
1548-3746
Print_ISBN :
0-7803-8294-3
Type :
conf
DOI :
10.1109/MWSCAS.2003.1562583
Filename :
1562583
Link To Document :
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