Title :
Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors
Author :
Zhuravlev, K. ; Toropov, A. ; Mansurov, V.
Author_Institution :
Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk
Abstract :
Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostructures growth for PHEMT, as well as the heterostructures themselves, have been also optimized. Presented in this paper is the data on MBE technology development, especially as regards GaN/AlGaN heterostructures with two-dimensional electronic gas for HEMT
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; buffer layers; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; AlGaAs-InGaAs-GaAs; FET parameter; GaN-AlGaN; III-V materials; MBE technology; PHEMT; UHF transistors; buffer layer optimization; field effect transistor; heterostructures growth; molecular beam epitaxy; nitride technology; pseudomorphic high electron mobility transistor; two-dimensional electronic gas; Aluminum gallium nitride; Buffer layers; FETs; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Molecular beam epitaxial growth; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256118
