A novel AlGaN/GaN HEMTs technology for intelligent electric network application

The AlGaN/GaN HEMTs with source-terminated field plate was firstly fabricated, employing by CF4 plasma treatment for enhancement-mode (E-mode). The results showed that by adding LGD from 5 um to 15 um, the breakdown voltage of the device was rapidly increased 350 V, whose value is from 50 V to 400 V while the threshold voltage of the device, VTH stayed about 0.5 V by the technology of CF4 plasma modulating electron sheet density of the channel. When the distance of source-terminated field plate, LFP was about 3 um, the breakdown voltage of the device was further improved because the electric field near the gate edge was effectively shielded. The breakdown voltage and the specific on-resistance for the device with the distance of LGD about 15um were about 475 V and about 2.9 m Ω · cm2 respectively. The results from RF measurement showed that with the variation of VGS, the fT and fMAX parameters of the device with source-terminated field plate were the order of Gigahertz frequency. The dynamic characteristic of E-mode power device was excellent and its forward current was about 80 mA. Therefore E-mode AlGaN/GaN technology was very suitable for the application of intelligent electric network.