Title :
Nanosecond Relaxation in GaAs
Author :
Moskalyuk, V. ; Kulikov, K.
Author_Institution :
NTUU, Kyev
Abstract :
A new technique for analytic definition of GaAs impulse conductivity is proposed. It is based on the relaxation equations of pulse, energy and concentration conservation, as well as on the analysis of relaxation times for different scattering effects. The validity of analytic model for pulses with different fronts is defined that made it possible to determine the optimal condition for nanosecond pulses generation
Keywords :
III-V semiconductors; electrical conductivity; gallium arsenide; GaAs; impulse conductivity; nanosecond pulses generation; nanosecond relaxation; relaxation equations; relaxation times; scattering effects; Gallium arsenide; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Physics; Temperature;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256136
