Heat-Resistant Au-TiBx-n-GaN Schottky Diodes

Author

Belyaev, A.E. ; Boltovets, N.S. ; Ivanov, V.N. ; Kladko, V.P. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Kuchuk, A.V. ; Lytvyn, O.S. ; Milenin, V.V. ; Sveshnikov, Yu.N.

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev

Volume

2

fYear

2006

fDate

11-15 Sept. 2006

Firstpage

644

Lastpage

645

Abstract

We studied phase composition and parameters of the ohmic Au-TiB _x-Al-Ti-n-GaN and barrier Au-TiB_x-n-GaN contacts, both before and after rapid thermal annealing (RTA) at T=870degC for 30 s. The phase composition was studied with X-ray diffraction technique, while the parameters of the ohmic contacts were studied for the transmission line method (TLM) structures and those of the barrier contacts were studied by measuring the forward branches of I-V curves with further calculation of the Schottky barrier (SB) height phiB and ideality factor n. It was found that low-resistance (rho_cap(1divide3)times10^-6 Omegamiddotcm² ohmic Au-TiB_x-Al-Ti-n-GaN contacts can be formed using RTA. It turned out also that, after RTA at T=870degC for 30s, the SB retains its barrier properties practically unchanged, as compared with the initial sample that has not been exposed to RTA

Keywords

III-V semiconductors; MIS devices; Schottky barriers; Schottky diodes; X-ray diffraction; aluminium; gallium compounds; gold; ohmic contacts; rapid thermal annealing; titanium; titanium compounds; wide band gap semiconductors; 30 s; 870 C; Au-TiB_x-Al-Ti-GaN; RTA; Schottky barrier; X-ray diffraction technique; barrier contacts; heat-resistant Schottky diodes; ohmic contacts; phase composition; rapid thermal annealing; transmission line method; Electromagnetic heating; Gallium nitride; Gold; III-V semiconductor materials; Ohmic contacts; Rapid thermal annealing; Schottky diodes; Semiconductor diodes; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

966-322-006-6

Electronic_ISBN

966-7968-92-8

Type

conf

DOI

10.1109/CRMICO.2006.256141

Filename

4023423