Title :
Contact Areas Influence on Quantum Wires Electric Characteristics
Author :
Obukhov, I. ; Kvjatkevich, I. ; Lavrenchuk, A.
Author_Institution :
Interface-MFG, Moscow
Abstract :
It is shown that under some conditions electric characteristics of quantum wire (QW) are completely determined by physical properties and topology of contact areas. New transistor types on the basis of QW are offered. Device is named "injection quantum transistor" (IQT). Current-voltage characteristics of IQT are calculated
Keywords :
quantum well devices; quantum wires; current-voltage characteristics; injection quantum transistor; physical properties; quantum wires electric characteristics; Electric variables; Electrons; Gallium arsenide; Voltage; Wire drawing; Zinc;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256142
