DocumentCode
2826694
Title
Contact Areas Influence on Quantum Wires Electric Characteristics
Author
Obukhov, I. ; Kvjatkevich, I. ; Lavrenchuk, A.
Author_Institution
Interface-MFG, Moscow
Volume
2
fYear
2006
fDate
Sept. 2006
Firstpage
649
Lastpage
654
Abstract
It is shown that under some conditions electric characteristics of quantum wire (QW) are completely determined by physical properties and topology of contact areas. New transistor types on the basis of QW are offered. Device is named "injection quantum transistor" (IQT). Current-voltage characteristics of IQT are calculated
Keywords
quantum well devices; quantum wires; current-voltage characteristics; injection quantum transistor; physical properties; quantum wires electric characteristics; Electric variables; Electrons; Gallium arsenide; Voltage; Wire drawing; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-92-8
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256142
Filename
4023424
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