• DocumentCode
    2826742
  • Title

    Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure

  • Author

    Borzdov, A. ; Pozdnyakov, D. ; Galenchik, V. ; Borzdov, V.

  • Author_Institution
    Belarus State Univ., Minsk
  • Volume
    2
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    659
  • Lastpage
    660
  • Abstract
    The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied
  • Keywords
    III-V semiconductors; SCF calculations; aluminium compounds; electron gas; gallium arsenide; semiconductor device models; surface roughness; surface scattering; transistors; GaAs-AlAs; one-dimensional electron gas; quantum wires; self-consistent calculation; semiconductor transistor structure; surface roughness scattering rate; Electrons; Gallium arsenide; Rough surfaces; Scattering; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-92-8
  • Electronic_ISBN
    966-7968-92-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2006.256145
  • Filename
    4023427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2826742