Design and nonlinear analysis of a dual-band Doherty power amplifier for ISM and LMDS applications

Author

Taghian, Fatemeh ; Abdipour, A. ; Mohammadi, Arash ; Roodaki, P.M.

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol. Tehran, Tehran, Iran

fYear

2011

fDate

18-22 Dec. 2011

Firstpage

1

Lastpage

4

Abstract

In this paper, the design and nonlinear analysis of a dual-band mm-wave Doherty power amplifier is presented. The Doherty power amplifier has been designed to operate simultaneously at 24GHz for ISM band and 28 GHz for LMDS applications with 1 GHz bandwidth at each band, using Large-signal model of 0.15μm GaAs PHEMT transistor with 6 dB of output power back off at both frequencies. Analysis results show that DPA improves both efficiency and linearity in a wide power ranges for these two frequency bands.

Keywords

III-V semiconductors; gallium arsenide; millimetre wave power amplifiers; power HEMT; DPA; GaAs; ISM band application; LMDS application; PHEMT transistor; bandwidth 1 GHz; dual-band mm-wave Doherty power amplifier; frequency 24 GHz; frequency 28 GHz; large-signal model; local multipoint communication service; nonlinear analysis; size 0.15 mum; Dual band; Microwave amplifiers; Microwave circuits; Microwave communication; Power amplifiers; Power generation; Doherty power amplifier; GaAS PHEMT; ISM band; LMDS; dual-band; millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics Conference (AEMC), 2011 IEEE

Conference_Location

Kolkata

Print_ISBN

978-1-4577-1098-8

Type

conf

DOI

10.1109/AEMC.2011.6256883

Filename

6256883