DocumentCode
2826960
Title
Studies of Defectformation in A-C: H Films, Fabricated by Means of Dual Inductive-Capacity System
Author
Tolstykh, P.V. ; Karpovich, I.A. ; Azarko, I.I. ; Poukhovoi, A. ; Buck, V.
Author_Institution
Belarusian State Univ., Minsk
Volume
2
fYear
2006
fDate
Sept. 2006
Firstpage
692
Lastpage
693
Abstract
The process of defects formation in -C: H films formed by CVD-method using additional external voltage was studied by means of different spectroscopic methods. Each EPR line showed the g-factor value of 2.002 regardless of self-bias, while the line width and defects´ concentration change in nonmonotomic manner
Keywords
carbon; chemical vapour deposition; defect states; g-factor; hydrogen; paramagnetic resonance; thin films; C:H; CVD-method; EPR line; a-C: H films; defect concentration; defect formation; dual inductive-capacity system; g-factor; line width; spectroscopic methods; Glass; Helium; IEEE catalog; Indium tin oxide; Magnetic flux leakage; Microwave technology; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-92-8
Electronic_ISBN
966-7968-92-8
Type
conf
DOI
10.1109/CRMICO.2006.256161
Filename
4023443
Link To Document