• DocumentCode
    2827022
  • Title

    Restrictions in Using Large Signal and Small Signal Models of FET Transistors

  • Author

    Raboch, Jiri ; Hoffmann, Karel

  • Author_Institution
    Czech Tech. Univ., Prague
  • fYear
    2007
  • fDate
    24-25 April 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A frequency doubler from 8.5 to 17 GHz was used to study reliability and accuracy of large signal Curtis Cubic model of HEMT transistor. Excelics EPA018A-70 was used for the tests. Two large signal designs and realizations for working points in class B and open state (near Idss) were made. Another design based on measured small signal s-parameters only was done for comparison, too. AWR Microwave Office was used for simulations. All designs were realized and measured. Significant discrepancies between simulated and measured parameters for Curtis Cubic model operated in class B were observed.
  • Keywords
    high electron mobility transistors; semiconductor device models; AWR Microwave Office; Curtis Cubic model; FET transistor models; HEMT transistor; frequency doubler; large signal model; Circuit testing; Frequency; HEMTs; Microwave FETs; Microwave transistors; Packaging; Power harmonic filters; Scattering parameters; Signal design; Voltage; FET Transistor; Frequency Doubler; Large Signal Model; Modeling, Measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radioelektronika, 2007. 17th International Conference
  • Conference_Location
    Brno
  • Print_ISBN
    1-4244-0821-0
  • Electronic_ISBN
    1-4244-0822-9
  • Type

    conf

  • DOI
    10.1109/RADIOELEK.2007.371674
  • Filename
    4234269