• DocumentCode
    2827603
  • Title

    Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer

  • Author

    Maezawa, Koichi ; Ito, Taihei ; Kadoda, Azusa ; Nakayama, Koji ; Yasui, Yuichiro ; Mori, Masayuki ; Miyazaki, Eiji ; Mizutani, Takashi

  • Author_Institution
    Univ. of Toyama, Toyama, Japan
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.
  • Keywords
    MOSFET; VLSI; alumina; elemental semiconductors; indium compounds; quantum wells; silicon; Al2O3-InSb-Si; MOSFET channel; VLSI; pseudomorphic quantum well MOSFET; transconductance; ultra thin channel layer; Aluminum oxide; Capacitance-voltage characteristics; Lattices; Logic gates; MOSFETs; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256925
  • Filename
    6256925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2827603