• DocumentCode
    2827618
  • Title

    Enhanced tunneling current in 1d-1dEdge overlapped TFET´s

  • Author

    Agarwal, Sapan ; Yablonovitch, Eli

  • Author_Institution
    Univ. of California, Berkeley, CA, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET´s) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.
  • Keywords
    conduction bands; field effect transistors; semiconductor device models; tunnelling; valence bands; conduction band; density of states; enhanced tunneling current; operating voltage; overlapped TFET; power consumption reduction; tunneling field effect transistors; valence band; Analytical models; Computational modeling; Junctions; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256926
  • Filename
    6256926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2827618