Title :
Enhanced tunneling current in 1d-1dEdge overlapped TFET´s
Author :
Agarwal, Sapan ; Yablonovitch, Eli
Author_Institution :
Univ. of California, Berkeley, CA, USA
Abstract :
In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET´s) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.
Keywords :
conduction bands; field effect transistors; semiconductor device models; tunnelling; valence bands; conduction band; density of states; enhanced tunneling current; operating voltage; overlapped TFET; power consumption reduction; tunneling field effect transistors; valence band; Analytical models; Computational modeling; Junctions; Switches;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256926
