Title :
440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth
Author :
Harvard, Ekaterina ; Shealy, James R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.
Keywords :
III-V semiconductors; UHF transistors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlSiN; HEMT; bandwidth 40 GHz; frequency 2 GHz; high electron mobility transistor; high voltage load line mapping; off-state breakdown voltage; voltage 440 V; Annealing; Artificial intelligence; Power measurement;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256933
