• DocumentCode
    2827771
  • Title

    440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth

  • Author

    Harvard, Ekaterina ; Shealy, James R.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.
  • Keywords
    III-V semiconductors; UHF transistors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlSiN; HEMT; bandwidth 40 GHz; frequency 2 GHz; high electron mobility transistor; high voltage load line mapping; off-state breakdown voltage; voltage 440 V; Annealing; Artificial intelligence; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256933
  • Filename
    6256933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2827771