An InAs nanowire spin transistor with subthreshold slope of 20mV/dec

We have fabricated a spin transistor based on InAs nanowire. The transistor operates based on Datta-Das type spin transistor mode [1][2][3]. The spin polarized electrons are injected from the ferromagnetic electrodes and synchronized spin precession is controlled by the gate voltage through spin-orbit interaction. We have clearly observed drain current oscillation versus gate voltage as expected from the Dyakonov-Pérel mechanism. By controlling the spin precession, on/off switching is expected to be achieved with the steep slope. The best of our obtained results has shown the steepest slope of 18mV/dec to 23mV/dec near the off-state ((2n+1)π-spin rotation) where vertical electric field meats the condition of persistent spin helix (PSH) motion [3]. The present result provide alternative method of steep slope device mechanism in addition to the conventional ideas such as Tunnel FETs or impact ionization FETs.