Title :
Mapping a path to the beyond-CMOS technology for computation
Author_Institution :
Components Res., Intel Corp., Hillsboro, OR, USA
Abstract :
This paper describes a methodology for benchmarking beyond CMOS exploratory devices for computation using metrics that can provide insights about the device fundamental operation. A more detailed investigation of circuits based upon two beyond-CMOS devices is given in the paper. First tunneling FET (TFET) circuits are compared to low power CMOS circuits. Then the All-Spin Logic device (ASLD) is described and a spin circuit theory based simulator is used to show the functional transient operation of an all spin logic circuit.
Keywords :
CMOS integrated circuits; field effect transistor circuits; logic devices; all-spin logic device; beyond CMOS exploratory devices; beyond-CMOS technology; low power CMOS circuits; spin circuit theory; tunneling FET circuits; Resistance; Switches; Switching circuits; Tin;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256942
