Title :
Electrical performance of single and coupled Cu interconnects for the 70 nm technology
Author :
Elbouazzati, K. ; Ponchei, F. ; Legier, J.F. ; Paleczny, E. ; Seguinot, C. ; Deschacht, D.
Author_Institution :
IEMN, UMR CNRS, Villeneuve d´´Ascq, France
Abstract :
This paper deals with propagation delay, rise time and crosstalk for Cu wire of 100 nm width and 2.2 to 1.7 aspect ratio AR ( AR ≃ h/w) in single and coupled configuration. Electrical and electromagnetical characteristics are predicted, with a full wave analysis, for various wire resistivity and low k dielectric material when a clock pulse of 143 ps period (7 GHz) propagate. Critical value of 300 μm is calculated for wire length when propagation delay equals MOSFET switching delay. Such critical values also induced more than 20% crosstalk in two coupled lines with 100 nm spacing and low k=2.0.
Keywords :
copper; crosstalk; integrated circuit interconnections; nanoelectronics; 100 nm; 143 ps; 7 GHz; 70 nm; Cu; Cu wire; MOSFET switching delay; clock pulse; coupled Cu interconnects; coupled configuration; crosstalk; electrical characteristics; electrical performance; electromagnetical characteristics; full wave analysis; low k dielectric material; nanometer technology; propagation delay; rise time; single Cu interconnects; single configuration; wire resistivity; Clocks; Conductivity; Copper; Crosstalk; Dielectric materials; Electromagnetic analysis; MOSFET circuits; Propagation delay; Shape; Wire;
Conference_Titel :
Signal Propagation on Interconnects, 2004. Proceedings. 8th IEEE Workshop on
Print_ISBN :
0-7803-8470-9
DOI :
10.1109/SPI.2004.1409048
