Design of 50MHz-1GHz low noise and high linearity MMIC amplifier

Author

Xu, Jian ; Wang, Gong-Zhi ; Zhang, Ying ; Huang, Jing

Author_Institution

Instn. of RF-&OE-ICs, Southeast Univ., Nanjing, China

Volume

3

fYear

2010

fDate

21-24 May 2010

Abstract

A 50MHz-1GHz low noise and high linearity amplifier monolithic-microwave integrated-circuit (MMIC) is presented in this article. The circuit was designed with 0.15um InGaAs PHEMT process. The ADS simulation results showed it gave excellent Noise Figure of 1.36dB and high linearity up to 17dBm IIP3 with 75Ohm systems. It is especially suitable in the applications such as cellular telephone base station driver amplifiers. the Cable TV etc.

Keywords

III-V semiconductors; MMIC amplifiers; analogue circuits; gallium arsenide; indium compounds; low noise amplifiers; power HEMT; ADS simulation; InGaAs; PHEMT process; cable TV; cellular telephone base station driver amplifiers; frequency 50 MHz to 1 GHz; high linearity MMIC amplifier; low noise MMIC amplifier; monolithic-microwave integrated-circuit; noise figure 1.36 dB; size 0.15 mum; Base stations; Circuit noise; Circuit simulation; Indium gallium arsenide; Linearity; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Telephony; InGaAs PHEMT; high linearity; low noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Future Computer and Communication (ICFCC), 2010 2nd International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-5821-9

Type

conf

DOI

10.1109/ICFCC.2010.5497534

Filename

5497534