Phonon limited transport in graphene pseudospintronic devices

Graphene pseudospin (G-PsS) devices have the potential to far outperform traditional CMOS devices. This is due to a predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate in double layer graphene. The condensate is formed when electrons and holes in residing in opposite graphene layers bind into excitons as a result of strong interlayer Coulomb interactions. This device is expected to exhibit interlayer superfluidity, which allows for large interlayer currents at correspondingly low interlayer bias voltages. As G-PsS device are expected to operate at room temperature, it is important to understand how the electron-phonon interaction (EPI) affects device performance.