DocumentCode :
2828178
Title :
Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics
Author :
Avasthi, Sushobhan ; McClain, Will ; Schwartz, Justin ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
93
Lastpage :
94
Abstract :
Narrow bandgap heterojunctions on crystalline silicon such as Si/Si1-xGex are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO2/Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application of this heterojunction to form a photovoltaic cell on silicon with no p-n junction, and all fabrication below a temperature of 75 °C.
Keywords :
elemental semiconductors; photovoltaic cells; silicon; solar cells; titanium compounds; Si-Si1-xGex; TiO2-S; blocks holes; crystalline silicon; hole-blocking titanium oxide-silicon heterojunction; narrow bandgap heterojunctions; photovoltaic cell; silicon photovoitaics; widegap heterojunctions; Coatings; Electrodes; Lead; Photovoltaic systems; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6256955
Filename :
6256955
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2828178
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