• DocumentCode
    2828178
  • Title

    Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics

  • Author

    Avasthi, Sushobhan ; McClain, Will ; Schwartz, Justin ; Sturm, James C.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    Narrow bandgap heterojunctions on crystalline silicon such as Si/Si1-xGex are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO2/Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application of this heterojunction to form a photovoltaic cell on silicon with no p-n junction, and all fabrication below a temperature of 75 °C.
  • Keywords
    elemental semiconductors; photovoltaic cells; silicon; solar cells; titanium compounds; Si-Si1-xGex; TiO2-S; blocks holes; crystalline silicon; hole-blocking titanium oxide-silicon heterojunction; narrow bandgap heterojunctions; photovoltaic cell; silicon photovoitaics; widegap heterojunctions; Coatings; Electrodes; Lead; Photovoltaic systems; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6256955
  • Filename
    6256955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2828178