Recess integration of platelet laser diodes with waveguides on silicon

We report the first demonstration of in-plane InGaAs/InP laser diodes integrated with SiON waveguides on silicon substrates using a modular recess-integration technique. This technique allows for pre-testing and selection of devices before integration, is compatible with integration on full CMOS wafers after conventional back-end processing is completed, and can be used to integrate multiple types of devices on a single wafer [1]. We feel it is superior to other optoelectronic integration techniques; more broadly, it is ideally suited to realizing robust, planar, monolithically integrated micro-systems incorporating a variety of materials and devices.