Study of SiOx-based complementary resistive switching memristor

Author

Chang, Yao-Feng ; Chen, Yen-Ting ; Xue, Fei ; Wang, Yanzhen ; Zhou, Fei ; Fowler, Burt ; Lee, Jack C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

18-20 June 2012

Firstpage

49

Lastpage

50

Abstract

The electrical characteristics of SiOx-based complementary resistive switching (CRS) memristor have been investigated. Post-deposition annealing (PDA: 500°C 5min in O₂) of TaN/SiO₂/n⁺⁺ Si-substrate CRS memristor has been found to reduce operational variation in device characteristics, as well as improve the electrical stability during repeated switching. In this work, we have also studied the effects of sweeping polarity, operating temperature, electrode material and dimension scaling. Our experimental results not only provide additional insights into optimization of the SiOx-based CRS memory but also help in constructing a physical picture for the switching mechanism.

Keywords

annealing; electrical resistivity; memristors; optimisation; silicon compounds; tantalum compounds; CRS memory; CRS memristor; PDA; SiO2; SiO₂; TaN; complementary resistive switching memristor; device characteristics; dimension scaling; electrical characteristics; electrical stability; electrode material; operating temperature; operational variation; optimization; post-deposition annealing; repeated switching; sweeping polarity; switching mechanism; temperature 500 C; time 5 min; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2012 70th Annual

Conference_Location

University Park, TX

ISSN

1548-3770

Print_ISBN

978-1-4673-1163-2

Type

conf

DOI

10.1109/DRC.2012.6256972

Filename

6256972