Title :
Study of SiOx-based complementary resistive switching memristor
Author :
Chang, Yao-Feng ; Chen, Yen-Ting ; Xue, Fei ; Wang, Yanzhen ; Zhou, Fei ; Fowler, Burt ; Lee, Jack C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
The electrical characteristics of SiOx-based complementary resistive switching (CRS) memristor have been investigated. Post-deposition annealing (PDA: 500°C 5min in O2) of TaN/SiO2/n++ Si-substrate CRS memristor has been found to reduce operational variation in device characteristics, as well as improve the electrical stability during repeated switching. In this work, we have also studied the effects of sweeping polarity, operating temperature, electrode material and dimension scaling. Our experimental results not only provide additional insights into optimization of the SiOx-based CRS memory but also help in constructing a physical picture for the switching mechanism.
Keywords :
annealing; electrical resistivity; memristors; optimisation; silicon compounds; tantalum compounds; CRS memory; CRS memristor; PDA; SiO2; SiO2; TaN; complementary resistive switching memristor; device characteristics; dimension scaling; electrical characteristics; electrical stability; electrode material; operating temperature; operational variation; optimization; post-deposition annealing; repeated switching; sweeping polarity; switching mechanism; temperature 500 C; time 5 min; USA Councils;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256972
