DocumentCode
2828678
Title
Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers
Author
Tung, Lieh-Ting ; Mateus, M. Veronica ; Kan, Edwin C.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2012
fDate
18-20 June 2012
Firstpage
113
Lastpage
114
Abstract
Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.
Keywords
energy gap; fullerene devices; graphene; nanoribbons; transistors; C; CMOS-compatible double-self-aligned spacer lithography; ambipolar conduction; double-self-aligned spacers; electrical characteristics; graphene film; independently-driven tri-gate graphene nanoribbon transistors; line edge roughness; perpendicular fields; transverse electrical fields; transverse-field bandgap modulation; width variation; Educational institutions; Electrostatics; FinFETs; Logic gates; Manganese; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6256978
Filename
6256978
Link To Document