Title :
InAs avalanche photodiode with improved electric field uniformity
Author :
Maddox, S.J. ; Sun, W. ; Lu, Z. ; Nair, H.P. ; Campbell, J.C. ; Bank, S.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Here, we report a significant, ~5x, increase in the room temperature multiplication gain for InAs APD´s, as compared to the state-of-the-art at 10 V reverse bias.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; InAs; avalanche photodiode; electric field uniformity; room temperature multiplication gain; voltage 10 V; Avalanche photodiodes; Current measurement; Doping profiles; Electric fields; Noise; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6256992
