• DocumentCode
    2829218
  • Title

    Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

  • Author

    Krishnamoorthy, Sriram ; Akyol, F. ; Jing Yang ; Park, Pil Sung ; Myers, R.C. ; Rajan, Sreeraman

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10-4 Ωcm2 by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10-3 Ωcm2. This is the first report of mid gap states assisted tunneling in GaN.
  • Keywords
    III-V semiconductors; gallium compounds; nanostructured materials; p-n junctions; tunnelling; wide band gap semiconductors; GaN-InGaN-GaN; interband tunnel junctions; low tunnel junction specific resistivity; mid gap states assisted tunneling; p-n junction; rare earth nitride nanoislands; Gallium nitride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257007
  • Filename
    6257007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829218