DocumentCode
2829303
Title
Nanowire phase change memory with carbon nanotube electrodes
Author
Feng Xiong ; Myung-Ho Bae ; Yuan Dai ; Liao, Albert D. ; Behnam, Ashkan ; Carrion, E. ; Sungduk Hong ; Ielmini, Daniele ; Pop, Eric
Author_Institution
Micro & Nanotechnol. Lab., Univ. Illinois at Urbana-Champaign, Urbana, IL, USA
fYear
2012
fDate
18-20 June 2012
Firstpage
215
Lastpage
216
Abstract
Phase change material (PCM) nanowires (NWs) that are self-aligned with carbon nanotube (CNT) electrodes that achieves a switching currents of the order ~1 μA, over two orders of magnitude below industrial state of the art, is described. The programming currents, ~0.1 μA SET, ~1.6 μA RESET, and power dissipation of the fabricated self-aligned PCM NW devices are among the lowest reported to date. The nanopatterning method used can be applied to probe other nanomaterials by automatically aligning them with CNT electrodes.
Keywords
electrodes; nanopatterning; nanotechnology; nanowires; phase change materials; phase change memories; C; PCM nanowire; carbon nanotube electrode; nanomaterials; nanopatterning method; nanowire phase change memory; phase change material; power dissipation; self-aligned PCM NW device; Electrodes; Heating; Nanoscale devices; Phase change materials; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2012 70th Annual
Conference_Location
University Park, TX
ISSN
1548-3770
Print_ISBN
978-1-4673-1163-2
Type
conf
DOI
10.1109/DRC.2012.6257011
Filename
6257011
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