DocumentCode :
2829362
Title :
Transparent diamond-based electrolyzer for integration with solar cell
Author :
Pietzka, C. ; Gao, Z. ; Xu, Y. ; Kohn, E.
Author_Institution :
Inst. of Electron Devices & Circuits, Ulm Univ., Ulm, Germany
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
279
Lastpage :
280
Abstract :
In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.
Keywords :
III-V semiconductors; chemical vapour deposition; diamond; electrodes; gallium compounds; indium compounds; nitrogen compounds; quantum wells; solar cells; HFCVD; III-nitride semiconductor materials system; InGaN; diamond-based electrolyzer; electrolyzer structure; high-quality NCD electrode material; low bandgap quantum well structures; metal dot modified CVD diamond electrode structure; monolithic integration; salt water; solar cell structure; Abstracts; Diamond-like carbon; Silicon; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6257014
Filename :
6257014
Link To Document :
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