Title :
Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates
Author :
Sasaki, Kohei ; Higashiwaki, Masataka ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu
Author_Institution :
Tamura Corp., Saitama, Japan
Abstract :
In conclusion, we fabricated Ga2O3 SBDs on a single-crystal ß-Ga2O3 (010) substrate. The devices showed good device characteristics such as an ideal factor close to 1.0 and reasonably high reverse VBR. These results indicate that Ga2O3 SBDs have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN have for power device applications. This work was partially supported by NEDO and JST PRESTO programs, Japan.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor devices; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; Ga2O3; GaN; JST PRESTO programs; Japan; NEDO; Schottky barrier diodes fabricated; SiC; power device; single-crystal substrates; widegap semiconductors; Density measurement; Gold; Material properties; Photonic band gap; Schottky barriers; Semiconductor device measurement; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6257021
