DocumentCode :
2829555
Title :
A very reliable multilevel YSZ resistive switching memory
Author :
Pan, Feng ; Jang, Jaewon ; Subramanian, Vivek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
217
Lastpage :
218
Abstract :
We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.
Keywords :
circuit reliability; random-access storage; yttrium compounds; zirconium compounds; RRAM device; Y2O3; ZrO2; incremental step pulse programming; metallic filament cells; multilevel YSZ resistive switching memory; oxygen vacancy-based cells; reliability; resistive random access memory; yttria stabilized zirconia; Electrodes; Films; Gold; Noise; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6257024
Filename :
6257024
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2829555
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