Title :
Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current
Author :
Gupta, Sumeet Kumar ; Kulkarni, Jaydeep P. ; Datta, Suman ; Roy, Kaushik
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.
Keywords :
MOSFET; elemental semiconductors; field effect transistors; low-power electronics; silicon; OFF current; SRAM; Si; dopant straggle-free heterojunction intra-band tunnel FET; double gate MOSFET; low drain-induced barrier lowering/thinning; Logic gates; MOSFET circuits; MOSFETs; Measurement; Silicon; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
Print_ISBN :
978-1-4673-1163-2
DOI :
10.1109/DRC.2012.6257027
