• DocumentCode
    2829607
  • Title

    Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current

  • Author

    Gupta, Sumeet Kumar ; Kulkarni, Jaydeep P. ; Datta, Suman ; Roy, Kaushik

  • Author_Institution
    Purdue Univ., West Lafayette, IN, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.
  • Keywords
    MOSFET; elemental semiconductors; field effect transistors; low-power electronics; silicon; OFF current; SRAM; Si; dopant straggle-free heterojunction intra-band tunnel FET; double gate MOSFET; low drain-induced barrier lowering/thinning; Logic gates; MOSFET circuits; MOSFETs; Measurement; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2012 70th Annual
  • Conference_Location
    University Park, TX
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4673-1163-2
  • Type

    conf

  • DOI
    10.1109/DRC.2012.6257027
  • Filename
    6257027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2829607