Oxide-free InP MIS structures having an ultra-narrow silicon surface quantum well

Author

Takahashi, Hiroshi ; Hasegawa, Hideki

Author_Institution

Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

463

Lastpage

466

Abstract

This paper proposes and experimentally evaluates a novel oxide-free InP MIS structure having an ultra-narrow silicon surface quantum well. A theoretical calculation showed that the structure becomes free of gap states for silicon layer thicknesses below 5 Å. Experimentally, an ultra-narrow silicon surface quantum well was realized by direct nitridation of MBE Si layer by ECR N₂ plasma and its detailed XPS analysis. A stable MIS structure with N_ssmin=2×10¹⁰ cm^-2 eV^-1 was successfully realized

Keywords

III-V semiconductors; MIS structures; X-ray photoelectron spectra; elemental semiconductors; energy gap; indium compounds; interface states; nitridation; semiconductor quantum wells; silicon; 5 A; ECR N₂ plasma; InP; MBE Si layer; N₂; Si; XPS analysis; direct nitridation; gap states; oxide-free InP MIS structures; ultra-narrow Si surface quantum well; Charge carrier processes; Fabrication; Indium phosphide; Interface states; Plasma confinement; Plasma devices; Plasma materials processing; Quantum mechanics; Silicon compounds; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712525

Filename

712525