DocumentCode :
2829890
Title :
Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain
Author :
Lal, Sunil ; Jing Lu ; Thibeault, Brian ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
165
Lastpage :
166
Abstract :
This paper report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (Id) of 29 mA and transconductance (gm_d) of 7.4 mS at a Vgs = 0 V is measured for a device with a width of (75x2) f.lm and an aperture length (Lap) of 8 μm.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; wafer bonding; wide band gap semiconductors; BAVET; InGaAs; aperture length; current 29 mA; drain current; size 8 mum; wafer bonded current aperture vertical electron transistor; wafer bonded heterostructure based unipolar transistor; Apertures; RNA;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2012 70th Annual
Conference_Location :
University Park, TX
ISSN :
1548-3770
Print_ISBN :
978-1-4673-1163-2
Type :
conf
DOI :
10.1109/DRC.2012.6257041
Filename :
6257041
Link To Document :
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