DocumentCode
283011
Title
Latest advances in MMW oscillators
Author
Ondria, John
Author_Institution
Marconi Electronic Devices Ltd., Lincoln, UK
fYear
1988
fDate
32185
Firstpage
1
Lastpage
17
Abstract
The author discusses some new device geometries expected to extend the useful fundamental operating frequency range of GaAs two terminal transferred electron devices (TEDs) or Gunn elements beyond 100 GHz. Similar structures are studied for multi-layered GaAs MMW IMPATT devices. Local oscillator millimeter wave (MMW) systems are predominately IMPATT (high power) and Gunn (low noise) sources. These components have been realized in both waveguide and integrated circuit configurations throughout the most widely used portion (26.5-110 GHz) of the MMW region
Keywords
Gunn oscillators; III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; waveguides; 26.5 to 110 GHz; EHF; GaAs; Gunn elements; Gunn sources; MMW IMPATT devices; MMW oscillators; SHF; TED; fundamental operating frequency range; integrated circuit configurations; millimeter wave systems; two terminal transferred electron devices; waveguide configurations;
fLanguage
English
Publisher
iet
Conference_Titel
Solid State Components for Radar, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
208806
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