• DocumentCode
    2830370
  • Title

    Influence of composition and texture on the thermoelectric and mechanical properties of extruded (Bi1-xSbx)2(Te1-ySey)3 alloys

  • Author

    Simard, J.-M. ; Vasilevskiy, D. ; Turenne, S.

  • Author_Institution
    5N Plus Inc, Montreal, Que., Canada
  • fYear
    2003
  • fDate
    17-21 Aug. 2003
  • Firstpage
    13
  • Lastpage
    18
  • Abstract
    This paper presents the results obtained after five years of process development to produce bismuth telluride based thermoelectric alloys by powder consolidation approach. The synthesis of the alloys is obtained by mechanical alloying from pure elemental powders. Billets are then produced by cold pressing followed by hot extrusion in order to have a fully dense polycrystalline product with a crystal texture characterized by the c-axis aligned perpendicularly to the extrusion direction. Semiconductors of type-n and type-p were produced by carefully controlling the chemical composition of the alloys and the concentration of doping agents. The evolution of the thermoelectric properties is given as a function of the constituents contents of the alloy to determine an optimal composition that leads to maximum value of the figure of merit. The effect of texture is measured not only on the thermoelectric properties but also on the mechanical behaviour of the material.
  • Keywords
    Seebeck effect; antimony compounds; bismuth compounds; electron mobility; extrusion; pressing; semiconductor materials; texture; thermoelectricity; (Bi1-xSbx)2(Te1-ySey)3; chemical composition; cold pressing; composition; doping agents concentration; extruded (Bi1-xSbx)2(Te1-ySey)3; fully dense polycrystalline product; hot extrusion; mechanical alloying; mechanical properties; powder consolidation approach; texture; thermoelectric; Alloying; Billets; Bismuth; Chemical elements; Lead; Mechanical factors; Powders; Pressing; Semiconductor device doping; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
  • Print_ISBN
    0-7803-8301-X
  • Type

    conf

  • DOI
    10.1109/ICT.2003.1287438
  • Filename
    1287438