Title :
High sensitivity and low intermodulation distortion p-i-n waveguide photodiode modules
Author :
Nishikata, K. ; Hiraiwa, K. ; Funabashi, Masaki ; Iwai, N. ; Yamanaka, N. ; Wakisaka, T. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Summary form only given. The developed waveguide photodiode (WGPD) module for CATV link applications consists of a 0.06 /spl mu/m thick GaInAs absorption layer, 3 /spl mu/m thick GaInAsP optical confinement layers, and InP cladding layers so that the optical confinement factor (r) was as low.
Keywords :
III-V semiconductors; cable television; gallium arsenide; gallium compounds; indium compounds; intermodulation distortion; modules; optical communication equipment; optical planar waveguides; p-i-n photodiodes; sensitivity; 0.06 mum; 3 mum; CATV link; GaInAs; GaInAs absorption layer; GaInAsP; GaInAsP optical confinement layers; InP; InP cladding layers; high sensitivity; low intermodulation distortion p-i-n waveguide photodiode modules; optical confinement factor; Distributed feedback devices; Fiber nonlinear optics; Intermodulation distortion; Nonlinear optics; Optical distortion; Optical sensors; Optical waveguides; Photodiodes; Voltage;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest
Conference_Location :
San Jose, CA, USA
Print_ISBN :
1-55752-521-8
DOI :
10.1109/OFC.1998.657320
