Title :
GaAs MMIC PIN Diodes SPDT Switcher
Author :
Barov, A. ; Gushchin, S.
Author_Institution :
Micran Co., Tomsk
Abstract :
This paper presents the description of GaAs MMIC PIN diodes switch design. The process included experimental part of pin diodes parameters determination. Epitaxial wafers substance was produced using VPE
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave switches; p-i-n diodes; parameter estimation; vapour phase epitaxial growth; GaAs; MMIC PIN diodes; SPDT; VPE; epitaxial wafers substance; monolithic microwave integrated circuit; parameters determination; single pole double throw switch; Circuit topology; Gallium arsenide; MMICs; Microwave integrated circuits; PIN photodiodes; Switches; Switching circuits;
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
DOI :
10.1109/CRMICO.2006.256356
