DocumentCode :
2830760
Title :
Integration of Depletion-and Enhancement-Mode AlGaAs/GaAs MESFET for High-Speed MMIC Application
Author :
Gusenkova, A. ; Maleev, N. ; Mikhrin, V. ; Kuzmenkov, A. ; Vasil´ev, A. ; Kulagina, M. ; Zhukov, A. ; Shulenkov, A.
Author_Institution :
Minsk R&D Inst. of Radiomater.
Volume :
1
fYear :
2006
fDate :
Sept. 2006
Firstpage :
193
Lastpage :
194
Abstract :
An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; aluminium compounds; etching; gallium arsenide; high-speed integrated circuits; Al1-xGaxAs-GaAs; GaAs; MESFET; channel etching; etch-stop layers; high-speed MMIC application; selective wet etching; Argon; Gallium arsenide; IEEE catalog; MESFETs; MMICs; Microwave technology; Organizing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2006. CriMiCO '06. 16th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-92-8
Electronic_ISBN :
966-7968-92-8
Type :
conf
DOI :
10.1109/CRMICO.2006.256357
Filename :
4023662
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2830760
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