DocumentCode
2830800
Title
Effect of transition element substitution on thermoelectric properties of semiconductor clathrate compounds
Author
Anno, H. ; Hokazono, M. ; Kawamura, M. ; Matsubara, K.
Author_Institution
Tokyo Univ. of Sci., Yamaguchi, Japan
fYear
2003
fDate
17-21 Aug. 2003
Firstpage
121
Lastpage
126
Abstract
Semiconductor clathrate compounds are energetically being studied as a new class of thermoelectric material based on the concept of Phonon Glass and Electron Crystal, since the materials combine glasslike low thermal conductivity and relatively good carrier mobility. These fascinating properties of clathrate compounds depend strongly on the details of their crystal structures. We will review our attempts to improve the thermoelectric properties of clathrate compounds by the modification of the electronic properties through the elemental substitution as well as by the optimization of doping level. We have revealed that the substitution of transition metal platinum, which causes the local ordering at the particular site of the framework, brings about a significant effect on the thermoelectric properties. The result indicates a new way for developing novel clathrate compounds with high thermoelectric performance.
Keywords
Hall mobility; carrier density; effective mass; semiconductor materials; thermal conductivity; thermoelectricity; Electron Crystal; Phonon Glass; glasslike low thermal conductivity; good carrier mobility; semiconductor clathrate compounds; thermoelectric material; thermoelectric properties; transition element substitution; Conducting materials; Crystalline materials; Doping; Electron mobility; Glass; Phonons; Platinum; Semiconductor materials; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN
0-7803-8301-X
Type
conf
DOI
10.1109/ICT.2003.1287464
Filename
1287464
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