Title :
Compact DSM MOSFET model and its parameters extraction
Author :
Belous, Anatoly ; Nelayev, Vladislav ; Shvedov, Sergey ; Stempitsky, Viktor ; Trung, Tran Tuan ; Turtsevich, Arkady
Author_Institution :
R&D Center BelMicroSystems, Joined Res. & Production Corp. Integral, Minsk, Belarus
Abstract :
New contribution to the methodology for simulation of Deep SubMicron (DSM), nanometer-scale Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) features is proposed. The discussed approach is based on the use of traditional “compact” submicron device model. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in DSM MOSFET.
Keywords :
MOSFET; charge carrier transfer; compact DSM MOSFET model; deep submicron MOSFET; nanometer-scale metal-oxide-semiconductor field effect transistor; Computational modeling; Integrated circuit modeling; MOSFET circuits; MOSFETs; Mathematical model; Parameter extraction; Simulation;
Conference_Titel :
Design & Test Symposium (EWDTS), 2011 9th East-West
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-1957-8
DOI :
10.1109/EWDTS.2011.6116414
