Title :
IGBT technology design and device optimization
Author :
Artamonov, Artem ; Nelayev, Vladislav ; Shelibak, Ibrahim ; Turtsevich, Arkady
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Insulated Gate Bipolar Transistor (IGBT) is popular device from series of microelectronics elements base for power energetic applications. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of IGBT manufacturing technology and device design. These results were obtained by means of Silvaco software package intended for technology/device simulation.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device manufacture; IGBT manufacturing technology; IGBT technology design; Silvaco software package; device optimization; electronic systems; insulated gate bipolar transistor; microelectronic components; power semiconductor devices; Annealing; Boron; Insulated gate bipolar transistors; Logic gates; Manufacturing; P-n junctions; Transistors;
Conference_Titel :
Design & Test Symposium (EWDTS), 2011 9th East-West
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-1957-8
DOI :
10.1109/EWDTS.2011.6116415
