IGBT technology design and device optimization

Author

Artamonov, Artem ; Nelayev, Vladislav ; Shelibak, Ibrahim ; Turtsevich, Arkady

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2011

fDate

9-12 Sept. 2011

Firstpage

233

Lastpage

236

Abstract

Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Insulated Gate Bipolar Transistor (IGBT) is popular device from series of microelectronics elements base for power energetic applications. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of IGBT manufacturing technology and device design. These results were obtained by means of Silvaco software package intended for technology/device simulation.

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device manufacture; IGBT manufacturing technology; IGBT technology design; Silvaco software package; device optimization; electronic systems; insulated gate bipolar transistor; microelectronic components; power semiconductor devices; Annealing; Boron; Insulated gate bipolar transistors; Logic gates; Manufacturing; P-n junctions; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Test Symposium (EWDTS), 2011 9th East-West

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-1957-8

Type

conf

DOI

10.1109/EWDTS.2011.6116415

Filename

6116415