Title :
Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6,5 V
Author :
Dudar, N.L. ; Borzdov, V.M.
Author_Institution :
Openly Join-Stock Co. Integral, Minsk, Belarus
Abstract :
The technology was proposed for fabrication of the silicon stabilitron with the stabilizing voltage of 6,5 V. There were defined substrate resistivity, phosphorus diffusion into substrate mode, ensuring the required stabilization voltage values under the conditions of room and two marginal values of temperatures (-55°C, +150°C). Comparison was made of the simulation data with the experiment results.
Keywords :
substrates; device-process simulation; discrete silicon stabilitron; phosphorus diffusion; stabilization voltage; stabilizing voltage; substrate mode; substrate resistivity; temperature -55 C; temperature 150 C; Conductivity; Doping; Impurities; Schedules; Silicon; Substrates; Temperature;
Conference_Titel :
Design & Test Symposium (EWDTS), 2011 9th East-West
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-1957-8
DOI :
10.1109/EWDTS.2011.6116417
