Title :
Development of mechanically and chemically stable electrical contacts for thermoelectric oxide material
Author :
Muchilo, D. ; Mrotzek, A. ; Muller, E. ; Kozlowska, K. ; Plewa, J. ; Altenburg, H.
Author_Institution :
German Aerosp. Center, Inst. of Mater. Res., Cologne, Germany
Abstract :
Oxide thermoelectric materials like NaxCoO2 are favourable candidates for thermoelectric energy conversion at high temperatures. One of the main technological problems of oxide thermoelectric devices is to provide mechanically and chemically stable contacts at the hot side. In order to identify suitable metals to be employed as contacts and diffusion barriers the reaction between the metals Ni, W, and Au, respectively, and NaxCoO2 has been investigated at different temperatures. A thin layer (5 μm) of Ni, W, and Au, respectively, was deposited on NaxCoO2 by sputtering or vapor deposition. In order to study the diffusion between the metal and the thermoelectric material, metallized samples were annealed in air, where NaxCoO2 remains stable. To avoid oxidation of the metals by the atmosphere, the coatings were covered by a thin Al2O3 protective layer of about 1 μm thick. After annealing the cross section of the samples has been investigated by means of scanning electron microscopy and energy-dispersive X-ray analysis. The condition of the metallic coating after exposure in air was studied and distinguished as: separated from substrate / adhering to substrate / continuous / cracked. The results of the reaction of NaxCoO2 with thin metal films of Ni, W and Au presented here show that Au exhibited only a narrow diffusion length after prolonged annealing while the Ni and W film were oxidized by the substrate NaxCoO2.
Keywords :
X-ray chemical analysis; annealing; cobalt compounds; electrical contacts; gold; nickel; scanning electron microscopy; semiconductor-metal boundaries; sodium compounds; sputtered coatings; surface diffusion; thermoelectricity; tungsten; vapour deposited coatings; 1 micron; 5 micron; Al2O3; Al2O3 protective layer; Au; NaxCoO2; Ni; W; annealed; chemically stable electrical contacts; energy-dispersive X-ray analysis; mechanically stable electrical contacts; metallized samples; narrow diffusion length; oxidation; scanning electron microscopy; sputtering; thermoelectric energy conversion; thermoelectric oxide material; vapor deposition; Annealing; Chemical technology; Coatings; Contacts; Energy conversion; Gold; Substrates; Temperature; Thermoelectric devices; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2003 Twenty-Second International Conference on - ICT
Print_ISBN :
0-7803-8301-X
DOI :
10.1109/ICT.2003.1287494