DocumentCode :
283146
Title :
Ultra high reliability planar InGaAs PIN photodiodes produced by the MOVPE process
Author :
Jenkins, D.G. ; Smith, D.R. ; Robertson, M. ; Sutherland, R. ; Skrimshire, C.
fYear :
1988
fDate :
32226
Abstract :
A planar InGaAs PIN photodiode has been developed which meets the stringent performance requirements of submarine systems. This is made possible by MOVPE epitaxial growth and the use of a planar device structure. The MOVPE growth and device structure are described, and a schematic diagram showing the photodiode structure is given. Reliability testing is discussed
fLanguage :
English
Publisher :
iet
Conference_Titel :
Submarine Optical Transmission Systems, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
209024
Link To Document :
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