Title :
IEE Colloquium on `GaAs on Si´ (Digest No.47)
Abstract :
The following topics were dealt with: GaAs on Si; heteroepitaxy; MBE; VPE; defect etching; quantum wells and photodiodes
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; vapour phase epitaxial growth; GaAs on Si; MBE; VPE; conference 1988; defect etching; heteroepitaxy; photodiodes; quantum wells;
Conference_Titel :
GaAs on Si, IEE Colloquium on
Conference_Location :
London
