Title :
Growth of III-V quantum wells on Si by MBE
Author :
Woodbridge, K. ; Gowers, J.P. ; Fewster, P.F.
Author_Institution :
Philips Res. Labs., Redhill, UK
Abstract :
Following establishment of the initial growth conditions for GaAs the authors have grown multiple quantum well structures consisting of 60 periods of 55 Å GaAs and 175 Å Al0.4Ga0.6 As on thick (about 2-3 μm) GaAs buffer layers using substrates tilted towards (110) in order to ensure a mainly single domain surface. In conclusion, very thin layer structures can be grown on Si with good lateral uniformity although the dislocation density near the surface is still high (~108 cm-2). The use of strained layer superlattices and off-oriented substrates, however, shows promise for reduction of both anti-phase domains and threading dislocations and a significant improvement in overall uniformity is observed when substrates tilted 4° off (100) towards (110) are used. Further work is in progress in these areas to effect a significant further reduction in detect densities
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; silicon; substrates; 175 A; 2 to 3 micron; 55 A; GaAs buffer layers; GaAs-Al0.4Ga0.6As; GaAs-Si; MBE; MQW; Si; dislocation density; initial growth conditions; lateral uniformity; mainly single domain surface; multiple quantum well structures; off-oriented substrates; reduction in detect densities; strained layer superlattices; very thin layer structures;
Conference_Titel :
GaAs on Si, IEE Colloquium on
Conference_Location :
London
