Growth of III-V quantum wells on Si by MBE

Author

Woodbridge, K. ; Gowers, J.P. ; Fewster, P.F.

Author_Institution

Philips Res. Labs., Redhill, UK

fYear

1988

fDate

32230

Firstpage

42461

Lastpage

42463

Abstract

Following establishment of the initial growth conditions for GaAs the authors have grown multiple quantum well structures consisting of 60 periods of 55 Å GaAs and 175 Å Al_0.4Ga_0.6As on thick (about 2-3 μm) GaAs buffer layers using substrates tilted towards (110) in order to ensure a mainly single domain surface. In conclusion, very thin layer structures can be grown on Si with good lateral uniformity although the dislocation density near the surface is still high (~10⁸ cm^-2). The use of strained layer superlattices and off-oriented substrates, however, shows promise for reduction of both anti-phase domains and threading dislocations and a significant improvement in overall uniformity is observed when substrates tilted 4° off (100) towards (110) are used. Further work is in progress in these areas to effect a significant further reduction in detect densities

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; silicon; substrates; 175 A; 2 to 3 micron; 55 A; GaAs buffer layers; GaAs-Al_0.4Ga_0.6As; GaAs-Si; MBE; MQW; Si; dislocation density; initial growth conditions; lateral uniformity; mainly single domain surface; multiple quantum well structures; off-oriented substrates; reduction in detect densities; strained layer superlattices; very thin layer structures;

fLanguage

English

Publisher

iet

Conference_Titel

GaAs on Si, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

209035